N Holonyak Jr.: search on Z-Library

The world's largest scientific articles store. 70,000,000+ articles for free.

Don't use scam websites

1

Planar Zn diffusion in InP

E.A. Rezek, P.D. Wright, N. Holonyak Jr.

Journal:

Solid-State Electronics

Year:

1978

Language:

english

File:

PDF, 582 KB

english, 1978

2

Growth and characterization of AlGaAs/GaAs quantum well lasers

R.D. Burnham, W. Streifer, T.L. Paoli, N. Holonyak Jr.

Journal:

Journal of Crystal Growth

Year:

1984

Language:

english

File:

PDF, 1.10 MB

english, 1984

3

From transistors to light emitters

Holonyak, N., Jr.

Journal:

IEEE Journal of Selected Topics in Quantum Electronics

Year:

2000

Language:

english

File:

PDF, 536 KB

english, 2000

4

Semiconductor alloy lasers--1962

Holonyak, N., Jr.

Journal:

IEEE Journal of Quantum Electronics

Year:

1987

Language:

english

File:

PDF, 3.40 MB

english, 1987

5

The semiconductor laser: a thirty-five-year perspective

Holonyak, N., Jr.

Journal:

Proceedings of the IEEE

Year:

1997

Language:

english

File:

PDF, 353 KB

english, 1997

6

Gain narrowing and output behavior of InP-InGaAlP tunneling injection quantum-dot-well laser

P.K. Kondratko, Shun-Lien Chuang, G. Walter, N. Holonyak, Jr., R.D. Heller, Xuebing Zhang, R.D. Dupuis

Journal:

IEEE Photonics Technology Letters

Year:

2005

Language:

english

File:

PDF, 156 KB

english, 2005

7

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2004 - San Jose, CA (Monday 26 January 2004)] Physics and Simulation of Optoelectronic Devices XII - Quantum well to quantum dot phonon-assisted tunneling

Chang, Shu-Wei W., Chuang, Shun-Lien, Holonyak, Jr., Nick, Osinski, Marek, Amano, Hiroshi, Henneberger, Fritz

Year:

2004

Language:

english

File:

PDF, 346 KB

english, 2004

8

Lattice matching and dislocations in LPE in1−xGaxP1−zAsz—InP heterojunctions

P.D. Wright, E.A. Rezek, N. Holonyak Jr.

Journal:

Journal of Crystal Growth

Year:

1977

Language:

english

File:

PDF, 1.16 MB

english, 1977

9

High-uniformity liquid phase epitaxial InGaAsP (λ = 1.3 μm)

P.E. Brunemeier, T.J. Roth, N. Holonyak Jr., G.E. Stillman

Journal:

Journal of Crystal Growth

Year:

1984

Language:

english

File:

PDF, 282 KB

english, 1984

10

Interface abruptness and dissolution-induced “damage” in LPE InGaAsP heterostructures

P.E. Brunemeier, K.C. Hsieh, D.G. Deppe, J.M. Brown, N. Holonyak Jr.

Journal:

Journal of Crystal Growth

Year:

1985

Language:

english

File:

PDF, 476 KB

english, 1985

11

Opto-electronic device structures fabricated by impurity induced disordering

R.L. Thornton, R.D. Burnham, T.L. Paoli, N. Holonyak Jr., D.G. Deppe

Journal:

Journal of Crystal Growth

Year:

1986

Language:

english

File:

PDF, 707 KB

english, 1986

12

Disordering of the ordered structure in MOCVD-grown GaInP and AlGaInP by impurity diffusion and thermal annealing

P. Gavrilovic, F.P. Dabkowski, K. Meehan, J.E. Williams, W. Stutius, K.C. Hsieh, N. Holonyak Jr., M.A. Shahid, S. Mahajan

Journal:

Journal of Crystal Growth

Year:

1988

Language:

english

File:

PDF, 1.06 MB

english, 1988

13

Stimulated emission in In0.5(AlxGa1−x)0.5P quantum well heterostructures

C.P. Kuo, R.M. Fletcher, T.D. Osentowski, M.G. Craford, D.W. Nam, N. Holonyak Jr., K.C. Hsieh, J.E. Fouquet

Journal:

Journal of Crystal Growth

Year:

1988

Language:

english

File:

PDF, 1.39 MB

english, 1988

14

Exciton absorption, photoluminescence and band structure of N-Free and N-DOPED In1−xGaxP

R.J. Nelson, N. Holonyak Jr.

Journal:

Journal of Physics and Chemistry of Solids

Year:

1976

Language:

english

File:

PDF, 1.01 MB

english, 1976

15

Solid solubility of Zn in Si

M.M. Blouke, N. Holonyak Jr., B.G. Streetman, H.R. Zwicker

Journal:

Solid State Communications

Year:

1969

Language:

english

File:

PDF, 176 KB

english, 1969

16

Optical phase shift measurement of residual defects in vapor epitaxial GaAsP

H.R. Zwicker, D.R. Scifres, N. Holonyak Jr., R.D. Dupuis, R.D. Burnham, J.W. Burd, Zh.I. Alferov

Journal:

Solid State Communications

Year:

1971

Language:

english

File:

PDF, 362 KB

english, 1971

17

Defect and phonon effects in In1−χGaχP p-n tunnel junctions

H.W. Korb, A.M. Andrews, N. Holonyak Jr., R.D. Burnham, C.B. Duke, G.G. Kleiman

Journal:

Solid State Communications

Year:

1971

Language:

english

File:

PDF, 421 KB

english, 1971

18

Isoelectronic trap transitions in GaAs1−xPx:N in the region of resonant enhancement (ENN ∼ EΓ, 0.3

R.D. Dupuis, N. Holonyak Jr., M.G. Craford, D. Finn, W.O. Groves

Journal:

Solid State Communications

Year:

1973

Language:

english

File:

PDF, 388 KB

english, 1973

19

The direct-indirect transition in In1−xGaxP

M.H. Lee, N. Holonyak Jr., W.R. Hitchens, J.C. Campbell, M. Altarelli

Journal:

Solid State Communications

Year:

1974

Language:

english

File:

PDF, 416 KB

english, 1974

20

Resonant enhancement (?) of the recombination probability at the nitrogen-trap, Γ-band edge crossover in GaAs1−xPx: N(EN = EΓ, x ≡ xN)

J.J. Coleman, N. Holonyak Jr., A.B. Kunz, W.O. Groves, D.L. Keune, M.G. Craford

Journal:

Solid State Communications

Year:

1975

Language:

english

File:

PDF, 360 KB

english, 1975

21

Identification of recombination luminescence transitions in N-doped GaAs1−xPx (x = 0.87)

D.J. Wolford, B.G. Streetman, R.J. Nelson, N. Holonyak Jr.

Journal:

Solid State Communications

Year:

1976

Language:

english

File:

PDF, 486 KB

english, 1976

22

Nitrogen trap bound states in In1−xGaxP

R.J. Nelson, N. Holonyak Jr.

Journal:

Solid State Communications

Year:

1976

Language:

english

File:

PDF, 303 KB

english, 1976

23

Determination of the indirect band edge of GaAs by quantum-well bandfilling (Lz∼100Å)

R.D. Dupuis, P.D. Dapkus, R.M. Kolbas, N. Holonyak Jr.

Journal:

Solid State Communications

Year:

1978

Language:

english

File:

PDF, 233 KB

english, 1978

24

Carrier collection in a semiconductor quantum well

H. Shichijo, R.M. Kolbas, N. Holonyak Jr., R.D. Dupuis, P.D. Dapkus

Journal:

Solid State Communications

Year:

1978

Language:

english

File:

PDF, 267 KB

english, 1978

25

Phonon-assisted recombination and stimulated emission in multiple quantum-well Mo-CVD AlxGa1-xAs-GaAs heterostructures (Lz∽50Å, E1-1' -2× h̵ωLO⪅h̵ω

R.M. Kolbas, N. Holonyak Jr., B.A. Vojak, K. Hess, M. Altareli, R.D. Dupuis, P.D. Dapkus

Journal:

Solid State Communications

Year:

1979

Language:

english

File:

PDF, 353 KB

english, 1979

26

The exciton in recombination in AlxGa1−xAs-GaAs quantum-well heterostructures

B.A. Vojak, N. Holonyak Jr., W.D. Laidig, K. Hess, J.J. Coleman, P.D. Dapkus

Journal:

Solid State Communications

Year:

1980

Language:

english

File:

PDF, 399 KB

english, 1980

27

Hot electrons and phonons in quantum-well AlxGa1-xAs-GaAs heterostructures

K. Hess, N. Holonyak Jr., W.D. Laidig, B.A. Vojak, J.J. Coleman, P.D. Dapkus

Journal:

Solid State Communications

Year:

1980

Language:

english

File:

PDF, 1.09 MB

english, 1980

28

Quenching of stimulated phonon emission in AlxGa1−xAs-GaAs quantum-well heterostructures

W.D. Laidig, N. Holonyak Jr., M.D. Camras, B.A. Vojak, K. Hess, J.J. Coleman, P.D. Dapkus

Journal:

Solid State Communications

Year:

1981

Language:

english

File:

PDF, 356 KB

english, 1981

29

Clustering and phonon effects in AlxGa1−xAsGaAs quantum-well heterostructure lasers grown by molecular beam epitaxy

N. Holonyak Jr., W.D. Laidig, M.D. Camras, H. Morkoç, T.J. Drummond, K. Hess

Journal:

Solid State Communications

Year:

1981

Language:

english

File:

PDF, 306 KB

english, 1981

30

High pressure experiments on AlxGa1−xAs-GaAs quantum-well heterostructure lasers

S.W Kirchoefer, N Holonyak Jr., K Hess, D.A Gulino, H.G Drickamer, J.J Coleman, P.D Dapkus

Journal:

Solid State Communications

Year:

1982

Language:

english

File:

PDF, 335 KB

english, 1982

31

Quantum well laser operation at low temperature in strong magnetic fields

P. Gavrilovic, K. Hess, N. Holonyak Jr., R.D. Burnham, T.L. Paoli, W. Streifer

Journal:

Solid State Communications

Year:

1983

Language:

english

File:

PDF, 254 KB

english, 1983

32

Absorption measurements at high pressure (0–10kbar) on strained superlattices

P. Garrilovic, K. Meehan, N. Holonyak Jr., K. Hess, W.P. Zurawsky, H.G. Drickamer, M.J. Ludowise, W.T. Dietze, C.R. Lewis

Journal:

Solid State Communications

Year:

1983

Language:

english

File:

PDF, 254 KB

english, 1983

33

Resonant tunneling in a GaAs1−xPx-GaAs strained-layer quantum-well heterostructure

P. Gavrilovic, J.M. Brown, R.W. Kaliski, N. Holonyak Jr., K. Hess, M.J. Ludowise, W.T. Dietze, C.R. Lewis

Journal:

Solid State Communications

Year:

1984

Language:

english

File:

PDF, 310 KB

english, 1984

34

The red-black effect in Ga(As1−xPx)

Nick Holonyak Jr., S.F. Bevacqua

Journal:

Solid-State Electronics

Year:

1964

Language:

english

File:

PDF, 85 KB

english, 1964

35

Gallium arsenide-phosphide: Crystal, diffusion and laser properties

C.J. Nuese, G.E. Stillman, M.D. Sirkis, N. Holonyak Jr.

Journal:

Solid-State Electronics

Year:

1966

Language:

english

File:

PDF, 1.54 MB

english, 1966

36

Space charge and oscillation effects in gold-doped silicon p-‘i’-n diodes

J.S. Moore, N. Holonyak Jr., M.D. Sirkis

Journal:

Solid-State Electronics

Year:

1967

Language:

english

File:

PDF, 859 KB

english, 1967

37

GaAs junction lasers containing the amphoteric dopants Ge and Si

R.D. Burnham, P.D. Dapkus, N. Holonyak Jr., D.L. Keune, H.R. Zwicker

Journal:

Solid-State Electronics

Year:

1970

Language:

english

File:

PDF, 503 KB

english, 1970

38

Optical phase shift measurement (77°K) of carrier decay time in direct GaAsP

D.R. Scifres, N. Holonyak Jr., R.D. Burnham, H.R. Zwicker

Journal:

Solid-State Electronics

Year:

1971

Language:

english

File:

PDF, 734 KB

english, 1971

39

Properties of n type Ge-doped epitaxial GaAs layers grown from Au-rich melts

A.M. Andrews, N. Holonyak Jr.

Journal:

Solid-State Electronics

Year:

1972

Language:

english

File:

PDF, 440 KB

english, 1972

40

Temperature dependence of threshold current for a quantum-well heterostructure laser

K. Hess, B.A. Vojak, N. Holonyak Jr., R. Chin, P.D. Dapkus

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 496 KB

english, 1980

41

Solid solubility of Zn in Si

M.M. Blouke, N. Holonyak Jr., B.G. Streetman, H.R. Zwicker

Journal:

Journal of Physics and Chemistry of Solids

Year:

1970

Language:

english

File:

PDF, 451 KB

english, 1970

42

Pressure experiment determination of the direct-indirect transition in the quarternary In1−xGaxP1−zAsz

R.J. Nelson, N. Holonyak Jr., W.R. Hitchens, D. Lazarus, M. Altarelli

Journal:

Solid State Communications

Year:

1976

Language:

english

File:

PDF, 459 KB

english, 1976

43

Current oscillations in Zn-doped Si p-i-n diodes

M.M. Blouke, N. Holonyak Jr., B.G. Streetman, H.R. Zwicker

Journal:

Solid-State Electronics

Year:

1970

Language:

english

File:

PDF, 1022 KB

english, 1970

44

Optical phase shift measurement of carrier decay-time on thin semiconductor samples with surface losses

H.R. Zwicker, D.L. Keune, N. Holonyak Jr., R.D. Burnham

Journal:

Solid-State Electronics

Year:

1971

Language:

english

File:

PDF, 1.01 MB

english, 1971

45

Bevel cross sectioning of ultra-thin (∼ 100 Å) III–V semiconductor layers

N. Holonyak Jr., B.A. Vojak, R.M. Kolbas, R.D. Dupuis, P.D. Dapkus

Journal:

Solid-State Electronics

Year:

1979

Language:

english

File:

PDF, 544 KB

english, 1979

46

Alloy clustering and its effect on impact ionization in ternary III–V compounds

M.S. Burroughs, K. Hess, N. Holonyak Jr., W.D. Laidig, G.E. Stillman

Journal:

Solid-State Electronics

Year:

1982

Language:

english

File:

PDF, 638 KB

english, 1982

47

Thermal behavior and stability of room-temperature continuous Al xGa1-xAs-GaAs quantum well heterostructure lasers grown on Si

Hall, D.C., Deppe, D.G., Holonyak, N., Jr., Matyi, R.J., Shichijo, H., Epler, J.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 157 KB

english, 1988

48

Space-charge-limited emission and oscillation effects in gold-doped silicon p-"i"-n diodes

Moore, J.S., Holonyak, N., Jr., Sirkis, M.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1967

Language:

english

File:

PDF, 189 KB

english, 1967

49

Infrared detection properties of Zn-doped Si p-i-n diodes

Maher, A.T., Streetman, B.G., Holonyak, N., Jr.

Journal:

IEEE Transactions on Electron Devices

Year:

1969

Language:

english

File:

PDF, 273 KB

english, 1969

50

Gas plasma gun (GPG) electron-beam pumped semiconductor laser

Verdeyen, J.T., Johnson, W.L., Cherrington, B.E., Holonyak, N., Jr., Campbell, J.C., Lee, M.H., Craford, M.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1973

Language:

english

File:

PDF, 184 KB

english, 1973